KF5N50DR Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF5N50DR/DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
V_DSS= 500V, I_D= 4.3A
Drain-Source ON Resistance : R_DS(ON)=1.4
Qg(typ) = 12nC
t_rr(typ) = 150ns
(Max) @V_GS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
I_D
I_DP
E_AS
E_AR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
RATING
500
30
4.3
2.7
13
270
8.6
20
59.5
0.48
150
-55 150
2.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
(KF5N50DR)
D
G
S
(KF5N50DS)
D
G
S
2008. 12. 3
Revision No : 0
1/6