|
KF5N25F_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
|
SEMICONDUCTOR
TECHNICAL DATA
KF5N25F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
hVDSS= 250V, ID= 5A
hDrain-Source ON Resistance :
RDS(ON)(MAX)=1.1Ê @VGS = 10V
hQg(typ) = 6nC
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current @TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
250
Â30
5*
3.1*
9*
55
2.5
4.5
26
0.2
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
4.8
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
A
C
E
L
M
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
*Single Gauge Lead Frame
TO-220IS (1)
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
G
S
2014. 12. 05
Revision No : 0
1/6
|
▷ |