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KF4N20LD_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
hVDSS(Min.)= 200V, ID= 3.6A
hDrain-Source ON Resistance : RDS(ON)=1.15 Ê(max) @VGS =10V
hQg(typ.) =2.9nC
hVth(Max.)= 2V
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
200
Gate-Source Voltage
VGSS
Â20
@TC=25Â
3.6
ID
Drain Current
@TC=100Â
2.2
Pulsed (Note1)
IDP
7*
Single Pulsed Avalanche Energy
(Note 2)
EAS
52
Repetitive Avalanche Energy
(Note 1)
EAR
3
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
5.5
Drain Power
Dissipation
TC=25Â
PD
Derate above25Â
31
0.25
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
4.0
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
KF4N20LD/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF4N20LD
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F
2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N
0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF4N20LI
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
IPAK(1)
2012. 1. 18
Revision No : 1
1/6
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