KF4N20LD Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
hV_DSS(Min.)= 200V, I_D= 3.6A
hDrain-Source ON Resistance : R_DS(ON)=1.05 ʃ(max) @V_GS =10V
hQg(typ.) =2.9nC
hV_th(Max.)= 2V
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
V_DSS
200
Gate-Source Voltage
V_GSS
‚20
@T_C=25
3.6
I_D
Drain Current
@T_C=100
2.2
Pulsed (Note1)
I_DP
7*
Single Pulsed Avalanche Energy
(Note 2)
E_AS
52
Repetitive Avalanche Energy
(Note 1)
E_AR
3
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
5.5
Drain Power
Dissipation
T_C=25
P_D
Derate above25
31
0.25
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
4.0
Thermal Resistance, Junction-to-
Ambient
R_thJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
PIN CONNECTION
KF4N20LD/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF4N20LD
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F
2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N
0.70 MIN
1
2
3
1. ANODE
2. CATHODE
3. ANODE
DPAK (1)
KF4N20LI
A
H
C
J
M
N
G
FF
123
P
L
1. ANODE
2. CATHODE
3. ANODE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
IPAK(1)
2010. 8. 20
Revision No : 0
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