KF3N60D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hV_DSS= 600V, I_D= 2.3A
hDrain-Source ON Resistance : R_DS(ON)=3.3ʃ @V_GS = 10V
hQg(typ) = 8.5nC
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF3N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage
V_DSS
600
Gate-Source Voltage
V_GSS
‚30
@T_C=25
2.3
I_D
Drain Current @T_C=100
1.46
Pulsed (Note1)
I_DP
7*
Single Pulsed Avalanche Energy
(Note 2)
E_AS
120
Repetitive Avalanche Energy
(Note 1)
E_AR
3.2
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Drain Power
Dissipation
Tc=25
P_D
Derate above 25
73
0.58
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
2.8
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
A
C
M
N
G
FF
123
DPAK (1)
KF3N60I
H
J
P
L
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
S
2010. 12. 20
Revision No : 0
1/6