KF2N60P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF2N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF2N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hV_DSS= 600V, I_D= 2A
hDrain-Source ON Resistance : R_DS(ON)=4.4ʃ(Max) @V_GS = 10V
hQg(typ) = 6.0nC
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
RATING
SYMBOL
KF2N60P
KF2N60F
UNIT
Drain-Source Voltage
V_DSS
600
Gate-Source Voltage
V_GSS
‚30
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
2
2*
1.3
1.3*
4
4*
60
2.3
4.5
50
28.4
0.4
0.23
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
2.5
4.4
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
PIN CONNECTION
(KF2N60P, KF2N60F)
D
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF2N60F
A
C
E
L
M
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
S
2011. 4. 29
Revision No : 0
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