KF2N60L Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
hV_DSS= 600V, I_D= 0.70A
hR_DS(ON)=4.4ʃ(Max) @V_GS = 10V
hQg(typ) = 6.0nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
V_DSS
Gate-Source Voltage
Drain Current
T_C=25
T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Ta=25
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
RATING
600
‚30
0.70
0.44
4.0
60
1.5
4.5
5.4
0.043
1
150
-55q150
23
125
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
W


/W
/W
KF2N60L
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
+_
+_
+_
PIN CONNECTION
2013. 1. 14
Revision No : 0
1/6