KF2N60D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF2N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
hV_DSS= 600V, I_D= 1.9A
hR_DS(ON)=4.4ʃ(Max) @V_GS = 10V
hQg(typ) = 6.0nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
RATING
600
‚30
1.9
1.2
4.0
60
2.3
4.5
40.3
0.32
150
-55q150
3.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
KF2N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF2N60I
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
PIN CONNECTION
(KF2N60D/I)
D
IPAK(1)
G
S
2011. 3. 23
Revision No : 0
1/6