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KF1N60L_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
KF1N60L
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
hVDSS= 600V, ID= 0.5A
hRDS(ON)=10Ê(Max) @VGS = 10V
hQg(typ) = 4.0nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
TC=25Â
TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25Â
Derate above 25Â
Ta=25Â
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
Â30
0.5
0.31
2.0
45
1.3
4.5
5.4
0.043
1
150
-55q150
23
125
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
W
Â
Â
Â/W
Â/W
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
S
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
0.35 MIN
L
0.75+_ 0.10
M
4
N
HO
P
25
1.25
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
N
N
1. GATE
2. DRAIN
3. SOURCE
TO-92L
PIN CONNECTION
D
G
S
2013. 1. 14
Revision No : 0
1/7
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