KF19N20D Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
hV_DSS(Min.)= 200V, I_D= 15A
hDrain-Source ON Resistance : R_DS(ON)=0.155 ʃ(max) @V_GS =10V
hQg(typ.) =21nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
T_C=25
Derate above25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
200
‚30
15
9.4
45*
215
4.9
4.5
83.3
0.67
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
T_j
150
T_stg
-55q150
Thermal Resistance, Junction-to-Case R_thJC
1.5
Thermal Resistance, Junction-to-
Ambient
R_thJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
KF19N20D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF19N20D
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F
2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O
0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF19N20I
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
IPAK(1)
2014. 12. 01
Revision No : 2
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