KF15N50N Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
V_DSS(Min.)= 500V, I_D= 15A
Drain-Source ON Resistance :
R_DS(ON)=0.42(Max.) @V_GS =10V
Qg(typ.) =35nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
500
30
15
40
860
19.5
dv/dt
4.5
215
P_D
1.72
T_j
150
T_stg
-55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
R_thJC
0.58
/W
R_thJA
40
/W
KF15N50N
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M _{K 1.5+0.15-0.05}
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
D
G
S
Marking
1
KF15N50
N
801
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 2
Revision No : 1
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