KF13N50P_10 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hV_DSS= 500V, I_D= 13A
hDrain-Source ON Resistance :
R_DS(ON)=0.44ʃ(Max) @V_GS = 10V
hQg(typ.) = 35nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
KF13N50P KF13N50F
Drain-Source Voltage
V_DSS
500
Gate-Source Voltage
V_GSS
‚30
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
13
13*
8
8*
40
40*
860
19.5
4.5
208
49.8
1.66
0.4
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
0.6
2.51
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
EQUIVALENT CIRCUIT
KF13N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF13N50P
KF13N50F
2010. 8. 16
Revision No : 2
1/7