|
KF11N50P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
|
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hVDSS= 500V, ID= 11A
hDrain-Source ON Resistance :
RDS(ON)=0.52Ê(Max) @VGS = 10V
hQg(typ.) = 26nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
RATING
SYMBOL
KF11N50P KF11N50F
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current @TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
500
Â30
11
11*
7
7*
33
33*
400
6.6
4.5
178
46.3
1.43
0.37
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
0.7
2.7
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
EQUIVALENT CIRCUIT
D
KF11N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF11N50P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF11N50F
A
C
E
L
M
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
*Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
S
2013. 5. 03
Revision No : 1
1/7
|
▷ |