KF10N60P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF10N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
hV_DSS=600V, I_D=10A
hDrain-Source ON Resistance :
R_DS(ON)(Max)=0.73ʃ @V_GS=10V
hQg(typ.)= 29.5nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF10N60P KF10N60F
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
600
‚30
10
10*
6
6*
25
25*
360
16.5
4.5
178
46
1.43
0.37
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
150

Storage Temperature Range
Thermal Characteristics
T_stg
-55q150

Thermal Resistance, Junction-to-Case R_thJC
0.7
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.7
/W
62.5 /W
PIN CONNECTION
(KF10N60P, KF10N60F)
D
KF10N60P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF10N60F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
G
S
2013. 5. 03
Revision No : 1
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