KF10N60P_10 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF10N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
hV_DSS=600V, I_D=10A
hDrain-Source ON Resistance :
R_DS(ON)(Max)=0.73ʃ @V_GS=10V
hQg(typ.)= 29.5nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF10N60P KF10N60F
Drain-Source Voltage
V_DSS
600
V
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
‚30
10
10*
6
6*
25
25*
400
16.5
4.5
178
46
1.43
0.37
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150

Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
0.7
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.7
/W
62.5 /W
KF10N60P
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF10N60F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
(KF10N60P, KF10N60F)
D
TO-220IS (1)
G
S
2010. 8. 16
Revision No : 0
1/7