KF10N50PR Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF10N50PR/FR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
active power factor correction and switching mode power supplies.
FEATURES
V_DSS=500V, I_D=10A
Drain-Source ON Resistance :
R_DS(ON)(Max)=0.65 @V_GS=10V
Qg(typ.)= 19.5nC
t_rr(typ) = 170ns
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF10N50PR KF10N50FR
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
500
V
30
V
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
10
10*
5
5*
25
25*
300
14.7
4.5
130
41.5
1.04
0.33
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
0.96
Thermal Resistance,
Junction-to-Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
3.0
/W
62.5
/W
PIN CONNECTION
(KF10N50PR, KF10N50FR)
D
KF10N50PR
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF10N50FR
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
S
2008. 11. 19
Revision No : 0
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