KDZ100VW Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – USC PACKAGE

SEMICONDUCTOR
TECHNICAL DATA
EL Driver System Application.
FEATURES
hSmall Package : USC
hSharp breakdown characteristic.
hNormal Voltage Tolerance About ‚5.0%
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Power Dissipation
Junction Temperature
Storage Temperature Range
P_D *
T_j
T_stg
200
150
-55q150
Operating Temperature
T_opr
-55q150
* Mounted on a glass epoxy circuit board of 20ƒ20ɘ,
pad dimension of 4ƒ4ɘ.
UNIT
mW



KDZ100VW
Bi-DIRECTIONAL ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
J
C
I
M
M
1. CATHODE
2. CATHODE
DIM MILLIMETERS
A
2.50+_ 0.1
B
1.25+_ 0.05
C
0.90 +_ 0.05
D 0.30+0.06/-0.04
E
1.70 +_0.05
F
MIN 0.17
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4+_ 0.05
L
2 +4/-2
M
4~6
USC
Marking
2
AW
Type Name
Lot No.
1
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Zener Voltage
Dynamic Impedan
(Note1)
(Note2)
V_Z
I_Z=1mA
Z_Z
I_Z=1mA
Reverse Current
I_R
V_R=76V
(Note 1) V_Z is tested with pulsed (40ms)
(Note 2) V_Z is measured at I_Z by given a very small A.C current signal.
2
1
MIN.
95. 0
-
-
TYP.
-
-
-
MAX.
105. 0
700
0.2
UNIT
V
ʃ
ǺA
2014. 3. 31
Revision No : 2
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