KDV804KS_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES
hLow Series Resistance : rs=0.3(TYP.).
hSmall Package : SOT-23.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE(C_2V)
UNIT
B
43q44.5
pF
C
44q45.5
KDV804KS
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_2V
Capacitance
C_8V
Capacitance Ratio
C_2V/C_8V
Series Resistance
r_S
TEST CONDITION
I_R=10ǺA
V_R=15V
V_R=2V, f=1MHz
V_R=8V, f=1MHz
C=38pF, f=100MHz
MIN.
15
-
43
24
1.74
-
TYP.
-
-
-
-
-
0.3
MAX.
-
50
45.5
28.8
1.85
0.4
UNIT
V
nA
pF
ʃ
2011. 5. 3
Revision No : 1
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