KDV804KS Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES
Low Series Resistance : rs=0.3(TYP.).
Small Package : SOT-23.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE(C_2V)
UNIT
A
42 43.5
B
43 44.5
C
44 45.5
pF
D
45 46.5
E
46 47.5
KDV804KS
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
Grade
T3 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
V_R
I_R
C_2V
C_8V
C_2V/C_8V
Series Resistance
r_S
TEST CONDITION
I_R=10 A
V_R=15V
V_R=2V, f=1MHz
V_R=8V, f=1MHz
C=38pF, f=100MHz
MIN.
15
-
42
24
1.74
-
TYP.
-
-
-
-
-
0.3
MAX.
-
50
47.5
28.8
1.85
0.4
UNIT
V
nA
pF
2003. 9. 16
Revision No : 0
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