KDV386S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hHigh Capacitance Ratio : C_1V/C_4V =1.8 (Min.)
hLow Series Resistance. : r_S=0.9ʃ (Max.)
hGood C-V Linearity.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


KDV386S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
Q
P
P
M
1. NC
2. ANODE
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
3
2
1
SOT-23
Marking
V B ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
I_R1
I_R2
C_1V
C_4V
C_1V/C_4V
r_S
TEST CONDITION
V_R=15V
V_R=15V, Ta=60
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=5V, f=470MHz
MIN.
-
-
43.0
18.5
1.8
-
TYP.
-
-
-
-
-
-
MAX.
10
100
49.0
25.5
-
0.9
UNIT
nA
pF
-
ʃ
2007. 10. 31
Revision No : 0
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