KDV365F_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hGood C-V Linearity.
hLow Series Resistance.
hSmall Package : TFSC.
KDV365F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
2
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
I_R1
I_R2
C_1V
C_4V
C_1V/C_4V
r_S
ESD Capability *
* Failure criterion : I_R‡20nA at V_R=10V.
TEST CONDITION
V_R=10V
V_R=10V, Ta=60
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=4V, f=100MHz
C=200pF, R=0ʃ, Both forward and
reverse direction 1 pulse.
MIN.
-
-
27.05
6.05
3.0
-
200
TYP.
-
-
-
-
-
-
-
MAX.
10
100
28.55
7.55
-
1.5
UNIT
nA
pF
-
ʃ
-
7
2004. 10. 6
Revision No : 0
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