KDV358_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hGood C-V Linearity.
hLow Series Resistance. : r_S=0.4ʃ (Max.)
hSmall Package : USC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


KDV358
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
VJ
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
I_R1
Reverse Current
I_R2
C_1V
Capacitance
C_4V
Capacitance Ratio
C_1V/C_4V
Series Resistance
r_S
TEST CONDITION
V_R=15V
V_R=15V, Ta=60
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
-
-
19.5
8.0
2.2
-
TYP.
-
-
-
-
-
-
MAX.
10
100
21.0
9.3
-
0.4
UNIT
nA
pF
-
ʃ
2008 .9 11
Revision No : 1
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