KDV355E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C_1V/C_4V =2.2(Min.)
Low Series Resistance : r_s=0.6 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
T_j
T_stg
RATING
15
150
-55 150
UNIT
V
KDV355E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
I_R1
I_R2
C_1V
C_4V
C_1V/C_4V
Series Resistance
r_S
TEST CONDITION
V_R=15V
V_R=15V, Ta=60
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
-
-
6.40
2.55
2.2
-
TYP.
-
-
-
-
-
-
MAX.
10
100
7.20
2.95
-
0.6
UNIT
nA
pF
2003. 10. 29
Revision No : 0
1/2