KDV350F_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hHigh Capacitance Ratio : C_1V/C_4V=2.8 (Min.)
hLow Series Resistance. : r_S=0.5ʃ (max.)
hGood C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
2
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
I_R1
Reverse Current
I_R2
C_1V
Capacitance
C_4V
Capacitance Ratio
C_1V/C_4V
Series Resistance
r_S
TEST CONDITION
V_R=15V
V_R=15V, Ta=60
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
-
-
15.5
5.0
2.8
-
TYP.
-
-
-
-
-
-
MAX.
10
100
17.0
6.0
-
0.5
UNIT
nA
pF
-
ʃ
2004. 7. 14
Revision No : 0
1/2