KDV350E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES
hLow Series Resistance : r_S=0.50ʃ(Max.)
hSmall Package. (ESC Package)
KDV350E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_1V
Capacitance
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1ǺA
V_R=15V
V_R=1V, f=1MHz
V_R=4V, f=1MHz
C_1V/C_4V, f=1MHz
V_R=1V, f=470MHz
MIN.
15
-
15.0
5.3
2.8
-
TYP.
-
-
-
-
-
-
MAX.
-
10
17.5
6.3
-
0.5
UNIT
V
nA
pF
ʃ
Marking
Type Name
UK
2014. 3. 31
Revision No : 1
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