KDV348E_0911 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES
hLow Series Resistance : r_S=0.50ʃ(Max.)
hSmall Package.
KDV348E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
Forward Current
I_F
RATING
10
150
-55q150
20
UNIT
V


mA
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VT
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
Capacitance
Capacitance Ratio
Series Resistance
C_1V
C_2V
C_3V
C_4V
C_1V/C_3V
C_1V/C_4V
r_S
TEST CONDITION
I_R=1ǺA
V_R=6V
V_R=6V, T_A=85
V_R=1V, f=1MHz
V_R=2V, f=1MHz
V_R=3V, f=1MHz
V_R=4V, f=1MHz
f=1MHz
f=1MHz
V_R=1V, f=470MHz
MIN.
10
-
-
37
21
14
-
2.15
-
-
TYP.
-
-
-
40
-
15.8
12.1
2.53
3.3
0.25
MAX.
-
10
100
44
26
17.6
-
-
-
0.5
UNIT
V
nA
pF
-
-
ʃ
2009. 11. 11
Revision No : 1
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