KDV302E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio
Low Series Resistance
KDV302E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
32
125
-55 125
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
V5
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
I_R
C_1V
C_2V
C_25V
C_28V
C_1V/C_28V
C_1V/C_2V
C_25V/C_28V
V_R=32V
V_R=1V, f=1MHz
V_R=2V, f=1MHz
V_R=25V, f=1MHz
V_R=28V, f=1MHz
-
-
-
Series Resistance
rs
V_R=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(V_R=1~28V)
2008. 5. 8
Revision No : 0
MIN.
-
56.0
-
-
2.45
21.6
1.25
1.07
-
TYP.
-
-
46.0
2.85
-
22.4
-
1.08
-
MAX.
10
62.0
-
-
2.80
-
-
-
1.15
UNIT
nA
pF
pF
pF
pF
-
-
-
1/2