KDV301E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV Tuning.
FEATURES
High Capacitance Ratio : C_2V/C_25V=14.5(Min.)
Low Series Resistance : r_s=1.1 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
T_j
T_stg
RATING
32
150
-55 150
UNIT
V
KDV301E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VQ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
I_R1
I_R2
C_2V
C_25V
C_2V/C_25V
V_R=30V
V_R=30V, Ta=60
V_R=2V, f=1MHz
V_R=25V, f=1MHz
-
Series Resistance
r_S
V_R=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(V_R=2~25V)
MIN.
-
-
39.5
2.60
14.5
-
TYP.
-
-
-
-
-
-
MAX.
10
100
47.4
3.03
-
1.1
UNIT
nA
pF
2005. 6. 1
Revision No : 0
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