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| KDV287E Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING) | |||
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SEMICONDUCTOR
TECHNICAL DATA
UHF SHF TUNING.
FEATURES
á´High Capacitance Ratio : C2V/C25V=7.6(Typ.)
á´Low Series Resistance : rS=1.9á½µ(Typ.)
á´Excellent C-V Characteristics, and Small Tracking Error.
á´Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
30
35(RL=10ká½µ)
125
-55á´125
UNIT
V
V
á´±
á´±
KDV287E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 6%.
C(Max.)-C(Min.)
C(Min.)
â0.06
(VR=2~25V)
TEST CONDITION
IR=1á»A
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
30
-
4.2
0.53
7.3
-
TYP.
-
-
-
-
-
1.9
MAX.
-
10
5.7
0.68
-
2.3
UNIT
V
nA
pF
pF
-
á½µ
Marking
Type Name
UP
2000. 3. 24
Revision No : 0
1/1
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