KDV275E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C_1V/C_4V =3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
28
150
-55 150
UNIT
V
KDV275E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_1V
Capacitance
C_2V
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=10 A
V_R=16V
V_R=1V, f=1MHz
V_R=2V, f=1MHz
V_R=4V, f=1MHz
C_1V/C_4V, f=1MHz
C_T=8pF, f=470MHz
ESC
MIN.
20
-
15.40
8.50
3.60
3.4
-
TYP.
-
-
16.60
10.20
4.30
-
-
MAX.
-
5
17.90
11.90
5.05
-
0.7
UNIT
V
nA
pF
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C_2V)
UNIT
A
8.5 9.15
pF
B
9.05~9.85
pF
C
9.75 10.65
pF
D
10.55~11.35
pF
E
11.25~11.90
pF
Marking
Type Name
C
Grade
2003 1. 27
Revision No : 0
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