KDV273UL Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND

SEMICONDUCTOR
TECHNICAL DATA
KDV273UL
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C_1V/C_4V =2.0(Typ.)
Low Series Resistance : r_s=0.39 (Typ.)
TENTATIVE
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
10
150
-55 150
UNIT
V
A
B
H
E
G
E
H
D
1. ANODE
2. CATHODE
DIM MILLIMETERS
A
1.0 +_ 0.05
B
0.6 +_ 0.05
C
0.36
+0.02
- 0.03
D
0.5 +_ 0.03
E
0.25 +_0.03
G
0.65+_ 0.03
H
0.05
ULP-2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_1V
Capacitance
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1 A
V_R=10V
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
10
-
15
7.3
1.8
-
TYP.
-
-
16
8.0
2.0
0.39
MAX.
-
10
17
8.7
-
0.5
UNIT
V
nA
pF
Marking
Type Name
VB
2007. 5. 16
Revision No : 0
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