KDV273E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hHigh Capacitance Ratio : C_1V/C_4V =2.0(Typ.)
hLow Series Resistance : r_s=0.39ʃ(Typ.)
KDV273E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
10
150
-55q150
UNIT
V


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_1V
Capacitance
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1ǺA
V_R=10V
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
10
-
15
7.3
1.8
-
TYP.
-
-
16
8.0
2.0
0.39
MAX.
-
10
17
8.7
-
0.5
UNIT
V
nA
pF
ʃ
2014. 3. 31
Revision No : 2
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