KDV262_03 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=12.5(Typ.)
Low Series Resistance : r_S=0.6 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V_R
V_RM
T_j
T_stg
RATING
34
36 (R_L=10k )
125
-55 125
UNIT
V
V
KDV262
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
Capacitance
C_2V
Capacitance
C_25V
Capacitance Ratio
C_2V/C_25V
C_25V/C_28V
Series Resistance
r_S
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.) _0.02
C(Min.)
(V_R=2~25V)
TEST CONDITION
I_R=1 A
V_R=28V
V_R=2V, f=1MHz
V_R=25V, f=1MHz
V_R=5V, f=470MHz
MIN.
34
-
33
2.6
12.0
1.03
-
Marking
TYP.
-
-
35.5
2.85
12.5
-
0.6
MAX.
-
10
38
3.0
-
-
0.8
UNIT
V
nA
pF
pF
-
Type Name
UQ
2003. 10. 16
Revision No : 2
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