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| KDV262 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) | |||
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SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
á´High Capacitance Ratio : C2V/C25V=12.5(Typ.)
á´Low Series Resistance : rS=0.6á½µ(Typ.)
á´Excellent C-V Characteristics, and Small Tracking Error.
á´Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
34
36 (RL=10ká½µ)
125
-55á´125
UNIT
V
V
á´±
á´±
KDV262
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C2V
C25V
C2V/C25V
C25V/C28V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
â0.02
(VR=2~25V)
TEST CONDITION
IR=1á»A
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
34
-
33
2.6
12.0
1.03
-
Marking
TYP.
-
-
35.5
2.85
12.5
-
0.6
MAX.
-
10
38
3.0
-
-
0.8
UNIT
V
nA
pF
pF
-
á½µ
Type Name
UQ
2001. 6. 11
Revision No : 1
1/2
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