KDV258E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
hHigh Capacitance Ratio : C_1V/C_4V =2.0(Min.)
hLow Series Resistance : r_s=0.45ʃ(Max.)
KDV258E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55q150
UNIT
V


2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
C_1V
Capacitance
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1ǺA
V_R=10V
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
15
-
19.0
8.5
2.0
-
TYP.
-
-
-
-
-
-
MAX.
-
10
21.0
10.0
-
0.45
UNIT
V
nA
pF
ʃ
Marking
Type Name
U6
2003. 3. 25
Revision No : 0
1/2