KDV258 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
ᴌHigh Capacitance Ratio : C_1V/C_4V =2.0(Min.)
ᴌLow Series Resistance : r_s=0.45ή(Max.)
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
15
150
-55ᴕ150
UNIT
V
á´±
á´±
KDV258
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
Capacitance
C_1V
C_4V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1ỌA
V_R=10V
V_R=1V, f=1MHz
V_R=4V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
15
-
19.0
8.5
2.0
-
TYP.
-
-
-
-
-
-
MAX.
-
10
21.0
10.0
-
0.45
UNIT
V
nA
pF
á½µ
Marking
Type Name
U6
2001. 6. 11
Revision No : 0
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