KDV257E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
ᴌLow Series Resistance : r_s=0.50ή(Max.)
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
10
150
-55ᴕ150
UNIT
V
á´±
á´±
KDV257E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Reverse Current
I_R
Capacitance
C_1V
C_2V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1ỌA
V_R=10V
V_R=1V, f=1MHz
V_R=2V, f=1MHz
-
V_R=1V, f=470MHz
MIN.
10
-
19.5
14.3
1.3
-
TYP.
-
-
-
-
-
-
MAX.
-
10
23.5
17.6
-
0.5
UNIT
V
nA
pF
á½µ
Marking
Type Name
EA
2001. 6. 11
Revision No : 0
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