KDV251M_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES
hLow Series Resistance : 0.6ʃ(Max.)
hHigh Capacitance Ratio : 1.7(Min.)q2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
12
150
-55q150
UNIT
V


CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C_1.6V/C_5V)
NONE
1.70q2.20
A
1.70q1.82
B
1.80q1.92
C
1.90q2.020
D
2.00q2.12
E
2.10q2.20
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
V_R
I_R
C_1.6V
C_5V
C_1.6V/C_5V
Series Resistance
r_S
TEST CONDITION
I_R=10ǺA
V_R=9V
V_R=1.6V, f=1MHz
V_R=5V, f=1MHz
V_R=1V, f=50MHz
2002. 6. 25
Revision No : 4
MIN.
12
-
23
11
1.7
-
TYP.
-
-
-
-
-
-
MAX.
-
200
38
19
2.2
0.6
UNIT
V
nA
pF
pF
ʃ
1/2