KDV251M_02 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES
Low Series Resistance : 0.6 (Max.)
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
12
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C_1.6V/C_5V)
NONE
1.70 2.20
A
1.70 1.82
B
1.80 1.92
C
1.90 2.020
D
2.00 2.12
E
2.10 2.20
Marking
Grade
Q3 ^{Type Name}
Lot No.
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
H
M
C
EE
1
2N
L
1. ANODE
2. CATHODE
O ^{DIM MILLIMETERS}
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G
14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
1
2
TO-92M
E
L
B
L
2
3
1
P
P
M
1. NC
2. ANODE
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
V_R
I_R
C_1.6V
C_5V
C_1.6V/C_5V
Series Resistance
r_S
TEST CONDITION
I_R=10 A
V_R=9V
V_R=1.6V, f=1MHz
V_R=5V, f=1MHz
V_R=1V, f=50MHz
SOT-23
MIN.
12
-
23
11
1.7
-
TYP.
-
-
-
-
-
-
MAX.
-
200
38
19
2.2
0.6
UNIT
V
nA
pF
pF
2002. 6. 25
Revision No : 4
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