KDV245 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
FEATURES
High Capacitance Ratio : C_0.5V/C_2.5V =2.5(Typ.)
Low Series Resistance : r_s=0.35 (Typ.)
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
10
150
-55 150
UNIT
V
KDV245
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50+_ 0.1
B
1.25+_ 0.05
C
0.90+_ 0.05
D 0.30+0.06/-0.04
E
1.70+_ 0.05
F
MIN 0.17
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4+_ 0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
V_R
I_R
C_0.5V
C_2.5V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=1 A
V_R=10V
V_R=0.5V, f=1MHz
V_R=2.5V, f=1MHz
C_0.5V/C_2.5V, f=1MHz
V_R=1V, f=470MHz
MIN.
10
-
7.3
2.75
2.4
-
TYP.
-
-
-
-
2.5
0.35
MAX.
-
3
8.4
3.4
-
-
UNIT
V
nA
pF
Marking
Type Name
ED
2003. 1. 27
Revision No : 0
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