KDV216E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio
Low Series Resistance
KDV216E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
32
125
-55 125
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
V3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
I_R
V_R=32V
C_1V
V_R=1V, f=1MHz
Capacitance
Capacitance Ratio
C_2V
C_25V
C_28V
C_1V/C_28V
C_1V/C_2V
C_25V/C_28V
V_R=2V, f=1MHz
V_R=25V, f=1MHz
V_R=28V, f=1MHz
-
-
-
Series Resistance
rs
V_R=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(V_R=1~28V)
MIN.
-
19.0
-
-
1.75
9.2
1.2
1.035
-
TYP.
-
-
15.0
2.1
-
10
-
1.045
-
MAX.
10
21.0
-
-
2.15
-
-
-
0.7
UNIT
nA
pF
pF
pF
pF
-
-
-
2014. 3. 31
Revision No : 3
1/2