KDV215_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
hHigh Capacitance Ratio : C2V/C25V=6.5(Typ.)
hLow Series Resistance : r_S=0.4ʃ(Typ.)
hExcellent C-V Characteristics, and Small Tracking Error.
hUseful for Small Size Tuner.
KDV215
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Peak Reverse Voltage
V_RM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
35 (R_L=10ʄ)
125
-55q125
UNIT
V
V


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
I_R
I_R
C_2V
C_25V
C_2V/C_25V
V_R=30V
V_R=30V, (Ta=60)
V_R=2V, f=1MHz
V_R=25V, f=1MHz
Series Resistance
r_S
V_R=5V, f=470MHz
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
∔0.025
C(Min.)
(V_R=2~25V)
MIN.
-
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
10
100
16.25
2.43
7.15
0.55
UNIT
nA
pF
-
ʃ
2005. 12. 7
Revision No : 0
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