KDV215 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : r_S=0.4 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Peak Reverse Voltage
V_RM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
35 (R_L=10 )
125
-55 125
UNIT
V
V
KDV215
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
I_R
V_R=30V
I_R
V_R=30V, (Ta=60 )
Capacitance
C_2V
C_25V
V_R=2V, f=1MHz
V_R=25V, f=1MHz
Capacitance Ratio
C_2V/C_25V
Series Resistance
r_S
V_R=5V, f=470MHz
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
0.025
C(Min.)
(V_R=2~25V)
Marking
Type Name
VA
MIN.
-
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
10
100
16.25
2.43
7.15
0.55
UNIT
nA
pF
-
2005. 12. 7
Revision No : 0
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