KDV214A_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
hHigh Capacitance Ratio : C2V/C25V=6.3(Min.)
hLow Series Resistance : r_S=0.57ʃ(Max.)
hExcellent C-V Characteristics, and Small Tracking Error.
hUseful for Small Size Tuner.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
32
125
-55q125
UNIT
V


KDV214A
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
UZ
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Current
I_R
Capacitance
C_2V
Capacitance
C_25V
Capacitance Ratio
C_2V/C_25V
Series Resistance
r_S
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
∔0.02
C(Min.)
(V_R=2~25V)
TEST CONDITION
V_R=28V
V_R=2V, f=1MHz
V_R=25V, f=1MHz
V_R=5V, f=470MHz
MIN.
-
14.15
1.96
6.3
-
TYP.
-
-
-
-
-
MAX.
10
15.75
2.25
-
0.57
UNIT
nA
pF
pF
-
ʃ
2008. 9. 11
Revision No : 1
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