KDV202E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
hHigh Capacitance Ratio : C_0.2V/C_2.3V =2.5(Min.)
hLow Series Resistance : r_s=0.6ʃ(Max.)
hSmall Package : ESC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
T_j
T_stg
RATING
6
150
-55q150
UNIT
V


KDV202E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance
Capacitance Ratio
I_R1
I_R2
C_0.2V
C_2.3V
C_0.2V/C_2.3V
Series Resistance
r_S
TEST CONDITION
V_R=6V
V_R=6V, Tj=85
V_R=0.2V, f=1MHz
V_R=2.3V, f=1MHz
-
C_T=30pF, f=100MHz
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE (C2.3V)
UNIT
(NONE)
7.2q11.2
A
7.2~8.7
B
8.3q9.7
pF
C
9.3~10.7
D
10.3~11.2
MARK
FA
F1
F2
F3
F4
MIN.
-
-
28.2
7.2
2.5
-
TYP.
-
-
-
-
-
0.35
MAX.
10
100
33.5
11.2
-
0.6
UNIT
nA
pF
ʃ
2014. 3. 31
Revision No : 4
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