KDV153_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
20
150
-55q150
UNIT
V


KDV153
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
2
1
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
V_R
I_R
C_2V
C_10V
C_2V/C_10V
Series Resistance
r_S
TEST CONDITION
I_R=1ǺA
V_R=20V
V_R=2V, f=1MHz
V_R=10V, f=1MHz
V_R=5V, f=470MHz
MIN.
20
-
14.16
4.5
2.5
-
TYP.
-
-
-
-
-
MAX.
10
16.25
6.0
-
0.6
UNIT
V
nA
pF
pF
ʃ
CLASSIPICATION OF CAPACITANCE GRADE
GRADE
A
CAPACITANCE (C₂V)
14.16q15.00
UNIT
B
14.50q15.40
pF
C
14.90q15.90
D
15.40q16.25
2002. 6. 25
Revision No : 2
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