KDV1480 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
Applicable to FM wide band due to high capacitance ratio.
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
16
150
-55 150
UNIT
V
KDV1480
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
CA ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance (Note1)
V_R
I_R
C_3.0V
C_4.5V
C_6.0V
C_8.0V
Figure of merit
Q
Capacitance Ratio
Note 1) Capacitance value of one diode.
C_3.0V/C_8.0V
TEST CONDITION
I_R=10 A
V_R=10V
V_R=3.0V, f=1MHz
V_R=4.5V, f=1MHz
V_R=6.0V, f=1MHz
V_R=8.0V, f=1MHz
V_R=3.0V, f=100MHz
-
MIN.
16
-
36.92
27.45
19.91
12.77
60
2.50
TYP.
-
-
-
-
-
-
-
-
MAX.
-
50
43.03
32.80
25.61
16.84
-
3.00
UNIT
V
nA
pF
2004. 2. 12
Revision No : 1
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