KDV1471 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
ᴌHigh Capacitance Ratio : C_1V/C_5V=5.0(Min.)
ᴌExcellent C-V Characteristics.
ᴌVariations of Capacitance Values is Little.
ᴌSmall Package.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
16
150
-55ᴕ150
UNIT
V
á´±
á´±
GRADE
A
B
C
CAPACITANCE(C_IV)
30.16~33.63
33.30~37.13
36.77~40.99
UNIT
pF
KDV1471
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE
2. NC
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 - 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
Grade
W3 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
V_R
I_R
C_1V
C_4.5V
K
I_R=10ỌA
V_R=10V
V_R=1V, f=1MHz
V_R=4.5V, f=1MHz
C_1V/C_5V, f=1MHz
Series Resistance
r_S
V_R=1.5V, f=100MHz
MIN.
16
-
30.16
6.2
5.0
-
TYP.
-
-
35.60
7.7
-
0.8
MAX.
-
50
40.99
9.2
-
1.0
UNIT
V
nA
pF
á½µ
2001. 5. 28
Revision No : 1
1/2