KDV1470 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
High Capacitance Ratio : C_1V/C_5V=5.0(Min.)
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
16
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE (C_1V)
UNIT
A
65.80 69.25
B
68.27 71.72
pF
C
70.74 74.20
KDV1470
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
Grade
S3 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
V_R
I_R
C_1V
C_2V
C_3V
C_4.5V
C_5V
Capacitance Ratio
K
Series Resistance
r_S
TEST CONDITION
I_R=10 A
V_R=10V
V_R=1V, f=1MHz
V_R=2V, f=1MHz
V_R=3V, f=1MHz
V_R=4.5V, f=1MHz
V_R=5V, f=1MHz
C_1V/C_5V, f=1MHz
V_R=1.5V, f=100MHz
2002. 6. 25
Revision No : 1
MIN.
16
-
65.8
-
-
12.0
-
5.0
-
TYP.
-
-
70
43
24
13.5
12.5
-
0.43
MAX.
-
50
74.2
-
-
14.8
-
-
0.5
UNIT
V
nA
pF
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