KDV142V_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PIN TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDV142V
SILICON EPITAXIAL PIN TYPE DIODE
For antenna switches in mobile applications.
FEATURES
hLow Capacitance : C_T=0.35[pF] (Max.)
hLow Series resistance : r_S=1.3[ʃ] (Max.)
hSmall Package : ESC
CATHODE MARK
2
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
I_F
T_j
T_stg
RATING
30
100
150
-55q150
UNIT
V
mA


B
DIM MILLIMETERS
A
A
1.4 +_ 0.05
B
1.0 +_ 0.05
C
0.6 +_ 0.05
D
0.28 +_ 0.03
E
0.5 +_ 0.05
F
0.12 +_ 0.03
1. ANODE
2. CATHODE
VSC
Marking
CATHODE MARK
2
1
PA
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Current
I_R
Forward Voltage
V_F
Total Capacitance
C_T
Series Resistance
r_s
ESD-Capability *
-
* Failure cirterion : I_R>100nA at V_R=30V.
TEST CONDITION
V_R=30V
I_F=10mA
V_R=1V, f=1MHz
I_F=10mA, f=100MHz
C=200pF, R=0ʃ,
Both forward and reverse
direction 1 pulse
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.1
1.0
0.35
1.3
UNIT
ǺA
V
pF
ʃ
100
-
-
V
2006. 9. 8
Revision No : 0
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